GD5F4GM8UEYIGR GigaDevice Semiconductor (HK) Limited
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 4GBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 1G x 4
Description: IC FLASH 4GBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 1G x 4
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Technische Details GD5F4GM8UEYIGR GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 4GBIT SPI/QUAD 8WSON, Packaging: Tape & Reel (TR), Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 4Gbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NAND (SLC), Clock Frequency: 133 MHz, Memory Format: FLASH, Supplier Device Package: 8-WSON (6x8), Write Cycle Time - Word, Page: 600µs, Memory Interface: SPI - Quad I/O, DTR, Access Time: 7 ns, Memory Organization: 1G x 4.
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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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GD5F4GM8UEYIGR | Hersteller : GigaDevice | NAND Flash |
Produkt ist nicht verfügbar |