GD25LB256EYIGR GigaDevice Semiconductor (HK) Limited
Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 70µs, 1.2ms
Memory Interface: SPI - Quad I/O, QPI, DTR
Access Time: 6 ns
Memory Organization: 32M x 8
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 70µs, 1.2ms
Memory Interface: SPI - Quad I/O, QPI, DTR
Access Time: 6 ns
Memory Organization: 32M x 8
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Technische Details GD25LB256EYIGR GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 256MBIT SPI/QUAD 8WSON, Packaging: Tape & Reel (TR), Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 2V, Technology: FLASH - NOR (SLC), Clock Frequency: 166 MHz, Memory Format: FLASH, Supplier Device Package: 8-WSON (6x8), Write Cycle Time - Word, Page: 70µs, 1.2ms, Memory Interface: SPI - Quad I/O, QPI, DTR, Access Time: 6 ns, Memory Organization: 32M x 8.
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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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GD25LB256EYIGR | Hersteller : GigaDevice | NOR Flash |
Produkt ist nicht verfügbar |