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GD15PJY120L2S STARPOWER
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Description: STARPOWER - GD15PJY120L2S - IGBT-Modul, PIM-Dreiphasen-Eingangsgleichrichter, 30 A, 1.7 V, 173 W, 150 °C, Module
tariffCode: 85412900
productTraceability: No
Kollektor-Emitter-Spannung, max.: 1.2kV
rohsCompliant: YES
Verlustleistung: 173W
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.7V
Betriebstemperatur, max.: 150°C
usEccn: EAR99
Dauer-Kollektorstrom: 30A
Produktpalette: -
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details GD15PJY120L2S STARPOWER
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2, Case: L2.2, Type of module: IGBT, Technology: Advanced Trench FS IGBT, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 15A, Pulsed collector current: 30A, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote GD15PJY120L2S nach Preis ab 32.48 EUR bis 33.78 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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GD15PJY120L2S | Hersteller : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2 Case: L2.2 Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 15A Pulsed collector current: 30A Electrical mounting: Press-in PCB Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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GD15PJY120L2S | Hersteller : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2 Case: L2.2 Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 15A Pulsed collector current: 30A Electrical mounting: Press-in PCB Mechanical mounting: screw |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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