GD15PJX65L2S STARPOWER
Hersteller: STARPOWERDescription: STARPOWER - GD15PJX65L2S - IGBT-Modul, PIM-Dreiphasen-Eingangsgleichrichter, 30 A, 1.45 V, 112 W, 150 °C, Module
tariffCode: 85412900
productTraceability: No
Kollektor-Emitter-Spannung, max.: 650V
rohsCompliant: YES
Verlustleistung: 112W
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.45V
Betriebstemperatur, max.: 150°C
usEccn: EAR99
Dauer-Kollektorstrom: 30A
Produktpalette: -
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details GD15PJX65L2S STARPOWER
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A, Type of module: IGBT, Semiconductor structure: diode/transistor, Case: L2.2, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Electrical mounting: Press-in PCB, Technology: Trench FS IGBT, Mechanical mounting: screw, Collector current: 15A, Pulsed collector current: 30A, Max. off-state voltage: 650V, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote GD15PJX65L2S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| GD15PJX65L2S | Hersteller : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A Type of module: IGBT Semiconductor structure: diode/transistor Case: L2.2 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Technology: Trench FS IGBT Mechanical mounting: screw Collector current: 15A Pulsed collector current: 30A Max. off-state voltage: 650V Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| GD15PJX65L2S | Hersteller : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A Type of module: IGBT Semiconductor structure: diode/transistor Case: L2.2 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Technology: Trench FS IGBT Mechanical mounting: screw Collector current: 15A Pulsed collector current: 30A Max. off-state voltage: 650V Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |