GD1400HFY120P2S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A, Pulsed collector current: 2.8kA, Collector current: 1.4kA, Gate-emitter voltage: ±20V, Electrical mounting: screw, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Type of module: IGBT, Case: P2.0, Technology: Advanced Trench FS IGBT, Topology: IGBT half-bridge, Anzahl je Verpackung: 8 Stücke.