GD100SGY120D6S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V, Max. off-state voltage: 1.2kV, Semiconductor structure: single transistor, Gate-emitter voltage: ±20V, Collector current: 100A, Pulsed collector current: 200A, Electrical mounting: screw, Mechanical mounting: screw, Type of module: IGBT, Technology: Advanced Trench FS IGBT, Topology: single transistor, Case: D6, Anzahl je Verpackung: 1 Stücke.