GD100MLX65L3S STARPOWER
Hersteller: STARPOWERDescription: STARPOWER - GD100MLX65L3S - IGBT-Modul, Drei-Ebenen-Wechselrichter, 160 A, 1.45 V, 451 W, 150 °C, Module
tariffCode: 85412900
productTraceability: No
Kollektor-Emitter-Spannung, max.: 650V
rohsCompliant: YES
Verlustleistung: 451W
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.45V
Betriebstemperatur, max.: 150°C
usEccn: EAR99
Dauer-Kollektorstrom: 160A
Produktpalette: -
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details GD100MLX65L3S STARPOWER
Category: IGBT modules, Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw, Max. off-state voltage: 650V, Semiconductor structure: diode/transistor, Case: L3.1, Technology: Trench FS IGBT, Gate-emitter voltage: ±20V, Collector current: 100A, Pulsed collector current: 200A, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Topology: NTC thermistor; three-level inverter; single-phase, Anzahl je Verpackung: 16 Stücke.
Weitere Produktangebote GD100MLX65L3S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| GD100MLX65L3S | Hersteller : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw Max. off-state voltage: 650V Semiconductor structure: diode/transistor Case: L3.1 Technology: Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Topology: NTC thermistor; three-level inverter; single-phase Anzahl je Verpackung: 16 Stücke |
Produkt ist nicht verfügbar |
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| GD100MLX65L3S | Hersteller : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw Max. off-state voltage: 650V Semiconductor structure: diode/transistor Case: L3.1 Technology: Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Topology: NTC thermistor; three-level inverter; single-phase |
Produkt ist nicht verfügbar |