GD1000HFX170P2S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A, Type of module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge, Max. off-state voltage: 1.7kV, Collector current: 1kA, Case: P2.0, Electrical mounting: screw, Gate-emitter voltage: ±20V, Pulsed collector current: 2kA, Technology: Trench FS IGBT, Mechanical mounting: screw, Anzahl je Verpackung: 8 Stücke.