GBL01-M3/51 Vishay General Semiconductor - Diodes Division
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Description: BRIDGE RECT 1PHASE 100V 4A GBL
Packaging: Tray
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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Technische Details GBL01-M3/51 Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 4A GBL, Packaging: Tray, Package / Case: 4-SIP, GBL, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBL, Voltage - Peak Reverse (Max): 100 V, Current - Average Rectified (Io): 4 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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GBL01-M3/51 | Hersteller : Vishay General Semiconductor |
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