![GANE3R9-150QBAZ GANE3R9-150QBAZ](https://www.mouser.com/images/nexperia/lrg/GANE3R9-_VQFN_7_SPL.jpg)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.58 EUR |
10+ | 10.79 EUR |
25+ | 9.77 EUR |
100+ | 8.99 EUR |
250+ | 8.47 EUR |
500+ | 7.92 EUR |
1000+ | 7.13 EUR |
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Technische Details GANE3R9-150QBAZ Nexperia
Description: GANE3R9-150QBA/SOT8091/VQFN7, Packaging: Tape & Reel (TR), Package / Case: 25-PowerVFQFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V, Power Dissipation (Max): 65W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 12mA, Supplier Device Package: 25-VQFN (4x6), Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V.
Weitere Produktangebote GANE3R9-150QBAZ nach Preis ab 6.9 EUR bis 12.62 EUR
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GANE3R9-150QBAZ | Hersteller : Nexperia USA Inc. |
Description: GANE3R9-150QBA/SOT8091/VQFN7 Packaging: Tape & Reel (TR) Package / Case: 25-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V Power Dissipation (Max): 65W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 12mA Supplier Device Package: 25-VQFN (4x6) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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GANE3R9-150QBAZ | Hersteller : Nexperia USA Inc. |
Description: GANE3R9-150QBA/SOT8091/VQFN7 Packaging: Cut Tape (CT) Package / Case: 25-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V Power Dissipation (Max): 65W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 12mA Supplier Device Package: 25-VQFN (4x6) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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GANE3R9-150QBAZ | Hersteller : NEXPERIA |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 20nC Bauform - Transistor: VQFN Anzahl der Pins: 25Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.0039ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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GANE3R9-150QBAZ | Hersteller : NEXPERIA | GANE3R9-150QBA/SOT8091/VQFN7 |
Produkt ist nicht verfügbar |
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GANE3R9-150QBAZ | Hersteller : Nexperia |
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Produkt ist nicht verfügbar |
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GANE3R9-150QBAZ | Hersteller : Nexperia |
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Produkt ist nicht verfügbar |