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GANB4R8-040CBAZ

GANB4R8-040CBAZ Nexperia

GANB4R8_040CBA-3445250.pdf Hersteller: Nexperia
GaN FETs GANB4R8-040CBA/SOT8086/WLCSP22
auf Bestellung 2500 Stücke:
Lieferzeit 107-111 Tag (e)
Anzahl Preis ohne MwSt
1+3.4 EUR
10+ 2.83 EUR
100+ 2.24 EUR
250+ 2.08 EUR
500+ 1.88 EUR
1000+ 1.62 EUR
2500+ 1.54 EUR
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Technische Details GANB4R8-040CBAZ Nexperia

Description: GANB4R8-040CBA/SOT8086/WLCSP22, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): 40V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 20 V, Package / Case: 22-UFBGA, WLCSP, Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 5V, Power Dissipation (Max): 13W (Ta), Supplier Device Package: 22-WLCSP (2.1x2.1).

Weitere Produktangebote GANB4R8-040CBAZ nach Preis ab 1.61 EUR bis 3.27 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
GANB4R8-040CBAZ Hersteller : Nexperia USA Inc. Description: GANB4R8-040CBA/SOT8086/WLCSP22
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 20 V
Package / Case: 22-UFBGA, WLCSP
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 5V
Power Dissipation (Max): 13W (Ta)
Supplier Device Package: 22-WLCSP (2.1x2.1)
auf Bestellung 2446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.27 EUR
10+ 2.94 EUR
25+ 2.78 EUR
100+ 2.37 EUR
250+ 2.22 EUR
500+ 1.94 EUR
1000+ 1.61 EUR
Mindestbestellmenge: 6
GANB4R8-040CBAZ Hersteller : NEXPERIA 4247898.pdf Description: NEXPERIA - GANB4R8-040CBAZ - Galliumnitrid (GaN)-Transistor, 20 A, 15.8 nC, WLCSP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: -V
rohsCompliant: YES
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 15.8nC
Bauform - Transistor: WLCSP
Anzahl der Pins: 22Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: -ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
GANB4R8-040CBAZ Hersteller : Nexperia USA Inc. Description: GANB4R8-040CBA/SOT8086/WLCSP22
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 20 V
Package / Case: 22-UFBGA, WLCSP
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 5V
Power Dissipation (Max): 13W (Ta)
Supplier Device Package: 22-WLCSP (2.1x2.1)
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