auf Bestellung 1563 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 11.05 EUR |
100+ | 10.82 EUR |
250+ | 10.63 EUR |
500+ | 10.4 EUR |
1000+ | 10.19 EUR |
2500+ | 10 EUR |
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Technische Details GAN080-650EBEZ Nexperia
Description: 650 V, 80 MOHM GALLIUM NITRIDE (, Packaging: Tape & Reel (TR), Part Status: Active, Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 6V, Power Dissipation (Max): 240W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 30.7mA, Supplier Device Package: DFN8080-8, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -6V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 400 V.
Weitere Produktangebote GAN080-650EBEZ nach Preis ab 8.12 EUR bis 14.31 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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GAN080-650EBEZ | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Part Status: Active Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 6V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 30.7mA Supplier Device Package: DFN8080-8 Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -6V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 400 V |
auf Bestellung 1970 Stücke: Lieferzeit 10-14 Tag (e) |
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GAN080-650EBEZ | Hersteller : NEXPERIA |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 6.2nC Bauform - Transistor: DFN8080 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 4378 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN080-650EBEZ | Hersteller : NEXPERIA |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 6.2nC Bauform - Transistor: DFN8080 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 4378 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN080-650EBEZ | Hersteller : NEXPERIA |
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Produkt ist nicht verfügbar |
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GAN080-650EBEZ | Hersteller : NEXPERIA |
![]() Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 29A Pulsed drain current: 58A Power dissipation: 240W Case: DFN8080-8 Gate-source voltage: -6...7V On-state resistance: 80mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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GAN080-650EBEZ | Hersteller : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 6V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 30.7mA Supplier Device Package: DFN8080-8 Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -6V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 400 V |
Produkt ist nicht verfügbar |
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GAN080-650EBEZ | Hersteller : NEXPERIA |
![]() Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 29A Pulsed drain current: 58A Power dissipation: 240W Case: DFN8080-8 Gate-source voltage: -6...7V On-state resistance: 80mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |