GA10SICP12-263 GeneSiC Semiconductor
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Technische Details GA10SICP12-263 GeneSiC Semiconductor
Description: TRANS SJT 1200V 25A D2PAK, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, Power Dissipation (Max): 170W (Tc), Supplier Device Package: TO-263-7, Part Status: Active, Drain to Source Voltage (Vdss): 1200 V, Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V.
Weitere Produktangebote GA10SICP12-263
Foto | Bezeichnung | Hersteller | Beschreibung |
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GA10SICP12-263 | Hersteller : GeneSiC Semiconductor |
Description: TRANS SJT 1200V 25A D2PAK Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A Power Dissipation (Max): 170W (Tc) Supplier Device Package: TO-263-7 Part Status: Active Drain to Source Voltage (Vdss): 1200 V Input Capacitance (Ciss) (Max) @ Vds: 1403 pF @ 800 V |
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