![G08P06D3 G08P06D3](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4902/MFG_G30N04D3.jpg)
G08P06D3 Goford Semiconductor
![GOFORD-G08P06D3.pdf](/images/adobe-acrobat.png)
Description: P60V,RD(MAX)<52M@-10V,VTH-2V~-3.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
FET Feature: Standard
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2972 pF @ 30 V
auf Bestellung 5529 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.02 EUR |
20+ | 0.9 EUR |
100+ | 0.62 EUR |
500+ | 0.52 EUR |
1000+ | 0.44 EUR |
2000+ | 0.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details G08P06D3 Goford Semiconductor
Description: P60V,RD(MAX).
Weitere Produktangebote G08P06D3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() |
G08P06D3 | Hersteller : Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V FET Feature: Standard Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2972 pF @ 30 V |
Produkt ist nicht verfügbar |