Produkte > GOFORD SEMICONDUCTOR > G080P06T

G080P06T GOFORD Semiconductor

GOFORD-G080P06T.pdf Hersteller: GOFORD Semiconductor
P-CH,-60V,-195A,RD(max) Less Than 7.5mOhm at -10V,VTH -2V to -4V ,TO-220
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
130+1.18 EUR
Mindestbestellmenge: 130
Produktrezensionen
Produktbewertung abgeben

Technische Details G080P06T GOFORD Semiconductor

P-CH,-60V,-195A,RD(max) Less Than 7.5mOhm at -10V,VTH -2V to -4V ,TO-220.

Weitere Produktangebote G080P06T

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
G080P06T G080P06T Hersteller : Goford Semiconductor GOFORD-G080P06T.pdf Description: P-60V,-195A,RD(MAX)<7.5M@-10V,VT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15195 pF @ 30 V
Produkt ist nicht verfügbar