G080P06T GOFORD Semiconductor
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P-CH,-60V,-195A,RD(max) Less Than 7.5mOhm at -10V,VTH -2V to -4V ,TO-220
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Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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130+ | 1.18 EUR |
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Technische Details G080P06T GOFORD Semiconductor
P-CH,-60V,-195A,RD(max) Less Than 7.5mOhm at -10V,VTH -2V to -4V ,TO-220.
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G080P06T | Hersteller : Goford Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V FET Feature: Standard Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15195 pF @ 30 V |
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