Technische Details FZ800R12KS4B2NOSA1 Infineon Technologies
Description: IGBT MOD 1200V 1200A 7600W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 800A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Obsolete, Current - Collector (Ic) (Max): 1200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 7600 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 52 nF @ 25 V.
Weitere Produktangebote FZ800R12KS4B2NOSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
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FZ800R12KS4B2NOSA1 | Hersteller : Infineon Technologies | High Power IGBT Module |
Produkt ist nicht verfügbar |
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FZ800R12KS4B2NOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 1200A 7600W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 800A NTC Thermistor: No Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 1200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 7600 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 52 nF @ 25 V |
Produkt ist nicht verfügbar |
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FZ800R12KS4B2NOSA1 | Hersteller : Infineon Technologies | IGBT Modules IHV IHM T XHP 3 3-6 5K |
Produkt ist nicht verfügbar |