FZ1000R65KE4NPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IHV IHM T
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: DC
Configuration: Single
Operating Temperature: -50°C ~ 135°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.25V @ 15V, 1kA
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1 kA
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 3600000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 245000 pF @ 25 V
Description: IHV IHM T
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: DC
Configuration: Single
Operating Temperature: -50°C ~ 135°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.25V @ 15V, 1kA
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1 kA
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 3600000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 245000 pF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5504.1 EUR |
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Technische Details FZ1000R65KE4NPSA1 Infineon Technologies
Description: IHV IHM T, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: DC, Configuration: Single, Operating Temperature: -50°C ~ 135°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.25V @ 15V, 1kA, NTC Thermistor: No, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 1 kA, Voltage - Collector Emitter Breakdown (Max): 6500 V, Power - Max: 3600000 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 245000 pF @ 25 V.
Weitere Produktangebote FZ1000R65KE4NPSA1 nach Preis ab 5563.36 EUR bis 5563.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
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FZ1000R65KE4NPSA1 | Hersteller : Infineon Technologies |
 IGBT Modules N |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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