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FS770R08A6P2LBBPSA1

FS770R08A6P2LBBPSA1 Infineon Technologies


infineon-fs770r08a6p2lb-datasheet-v03_00-en.pdf Hersteller: Infineon Technologies
Trans IGBT Module N-CH 750V 450A 654000mW Automotive 33-Pin HYBRIDD-1 Tray
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Technische Details FS770R08A6P2LBBPSA1 Infineon Technologies

Description: HYBRID PACK DRIVE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A, NTC Thermistor: Yes, Supplier Device Package: AG-HYBRIDD-1, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 450 A, Voltage - Collector Emitter Breakdown (Max): 750 V, Power - Max: 654 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 80 nF @ 50 V.

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FS770R08A6P2LBBPSA1 FS770R08A6P2LBBPSA1 Hersteller : Infineon Technologies Infineon-FS770R08A6P2LB-DataSheet-v03_00-EN.pdf?fileId=5546d4626b2d8e69016b506d3585089c Description: HYBRID PACK DRIVE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 654 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
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FS770R08A6P2LBBPSA1 FS770R08A6P2LBBPSA1 Hersteller : Infineon Technologies Infineon_FS770R08A6P2LB_DataSheet_v03_00_EN-3361584.pdf IGBT Modules HYBRID PACK DRIVE G1 SI
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