FS75R12KT4B11BOSA1 Infineon Technologies
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Technische Details FS75R12KT4B11BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 75A 385W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 385 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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FS75R12KT4B11BOSA1 | Hersteller : Infineon Technologies | Trans IGBT Module N-CH 1200V 75A 385W 25-Pin ECONO2-6 Tray |
Produkt ist nicht verfügbar |
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FS75R12KT4B11BOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 75A 385W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 385 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V |
Produkt ist nicht verfügbar |