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FS35R12W1T4BOMA1

FS35R12W1T4BOMA1 Infineon Technologies

Infineon-FS35R12W1T4-DS-v02_01-en_de.pdf?fileId=db3a3043139a1bac0113b4be783c0543 Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 65A 225W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 225 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
auf Bestellung 306 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+71.83 EUR
24+ 50.31 EUR
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Technische Details FS35R12W1T4BOMA1 Infineon Technologies

Description: IGBT MOD 1200V 65A 225W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 65 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 225 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 2 nF @ 25 V.

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FS35R12W1T4BOMA1 FS35R12W1T4BOMA1 Hersteller : Infineon Technologies ds_fs35r12w1t4_2_1.pdf Trans IGBT Module N-CH 1200V 65A 225000mW 18-Pin EASY1B-1 Tray
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)