FS100R12KS4BOSA1 Infineon Technologies
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Technische Details FS100R12KS4BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 130A 660W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Active, Current - Collector (Ic) (Max): 130 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 660 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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FS100R12KS4BOSA1 | Hersteller : Infineon Technologies | Trans IGBT Module N-CH 1200V 130A 660000mW Tray |
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FS100R12KS4BOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 130A 660W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A NTC Thermistor: No Supplier Device Package: Module Part Status: Active Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 660 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V |
Produkt ist nicht verfügbar |