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FQPF5P20 onsemi
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Description: MOSFET P-CH 200V 3.4A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
auf Bestellung 3645 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
553+ | 0.88 EUR |
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Technische Details FQPF5P20 onsemi
Description: MOSFET P-CH 200V 3.4A TO220F, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V.
Weitere Produktangebote FQPF5P20 nach Preis ab 1 EUR bis 2.18 EUR
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FQPF5P20 | Hersteller : onsemi / Fairchild |
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auf Bestellung 709 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF5P20 | Hersteller : ONSEMI |
![]() Drain-Source-Spannung Vds: 200 Dauer-Drainstrom Id: 3.4 Qualifikation: - Verlustleistung Pd: 38 Gate-Source-Schwellenspannung, max.: 5 Verlustleistung: 38 Bauform - Transistor: TO-220F Anzahl der Pins: 3 Produktpalette: QFET Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 1.1 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 1.1 SVHC: Lead (17-Jan-2022) |
auf Bestellung 578 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF5P20 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FQPF5P20 | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V |
Produkt ist nicht verfügbar |