FQPF19N20 Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N-CH 200V 11.8A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 15905 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 281+ | 1.76 EUR |
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Technische Details FQPF19N20 Fairchild Semiconductor
Description: MOSFET N-CH 200V 11.8A TO220F, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 5.9A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V.
Weitere Produktangebote FQPF19N20 nach Preis ab 1.76 EUR bis 3.85 EUR
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FQPF19N20 | Hersteller : onsemi |
Description: MOSFET N-CH 200V 11.8A TO220F Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 5.9A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
auf Bestellung 10107 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF19N20 | Hersteller : onsemi / Fairchild |
MOSFET 200V N-Channel QFET |
auf Bestellung 987 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF19N20 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 11.8A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FQPF19N20 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 7.5A; Idm: 48A; 50W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Pulsed drain current: 48A Drain-source voltage: 200V Drain current: 7.5A On-state resistance: 0.15Ω Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 40nC Kind of channel: enhanced Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQPF19N20 | Hersteller : onsemi |
Description: MOSFET N-CH 200V 11.8A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 5.9A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQPF19N20 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 7.5A; Idm: 48A; 50W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Pulsed drain current: 48A Drain-source voltage: 200V Drain current: 7.5A On-state resistance: 0.15Ω Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 40nC Kind of channel: enhanced Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |