![FQP9N30 FQP9N30](https://media.digikey.com/Renders/Fairchild%20Semi%20Renders/261_TO-220-3.jpg)
FQP9N30 onsemi
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Description: MOSFET N-CH 300V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
auf Bestellung 994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.22 EUR |
10+ | 2.89 EUR |
100+ | 2.32 EUR |
500+ | 1.91 EUR |
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Technische Details FQP9N30 onsemi
Description: MOSFET N-CH 300V 9A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V, Power Dissipation (Max): 98W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V.
Weitere Produktangebote FQP9N30
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FQP9N30 | Hersteller : ON Semiconductor / Fairchild |
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auf Bestellung 749 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP9N30 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FQP9N30 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FQP9N30 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FQP9N30 | Hersteller : ONSEMI |
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Produkt ist nicht verfügbar |
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FQP9N30 | Hersteller : Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V |
Produkt ist nicht verfügbar |