auf Bestellung 326 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.88 EUR |
10+ | 4.4 EUR |
25+ | 4.17 EUR |
100+ | 3.61 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQP8N90C onsemi / Fairchild
Description: MOSFET N-CH 900V 6.3A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc), Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.15A, 10V, Power Dissipation (Max): 171W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V.
Weitere Produktangebote FQP8N90C
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
FQP8N90C | Hersteller : ON Semiconductor |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
|||
FQP8N90C | Hersteller : ON Semiconductor | Trans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
||
FQP8N90C | Hersteller : onsemi |
Description: MOSFET N-CH 900V 6.3A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.15A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V |
Produkt ist nicht verfügbar |