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FQP4N20L Fairchild Semiconductor
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Description: POWER FIELD-EFFECT TRANSISTOR, 3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.9A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
548+ | 0.91 EUR |
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Technische Details FQP4N20L Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.9A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V.
Weitere Produktangebote FQP4N20L nach Preis ab 0.84 EUR bis 1.97 EUR
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FQP4N20L | Hersteller : onsemi / Fairchild |
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auf Bestellung 466 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP4N20L | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.9A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V |
auf Bestellung 68 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP4N20L | Hersteller : ON Semiconductor |
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auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP4N20L | Hersteller : ON Semiconductor |
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auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP4N20L | Hersteller : FAIRCHILD |
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auf Bestellung 100000 Stücke: Lieferzeit 21-28 Tag (e) |
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FQP4N20L | Hersteller : FAIRCHILD |
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auf Bestellung 1758 Stücke: Lieferzeit 21-28 Tag (e) |
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FQP4N20L | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FQP4N20L | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 2.4A; Idm: 15.2A; 45W; TO220AB Mounting: THT Gate charge: 5.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 15.2A Case: TO220AB Drain-source voltage: 200V Drain current: 2.4A On-state resistance: 1.4Ω Type of transistor: N-MOSFET Power dissipation: 45W Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQP4N20L | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 2.4A; Idm: 15.2A; 45W; TO220AB Mounting: THT Gate charge: 5.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 15.2A Case: TO220AB Drain-source voltage: 200V Drain current: 2.4A On-state resistance: 1.4Ω Type of transistor: N-MOSFET Power dissipation: 45W Polarisation: unipolar Kind of package: tube |
Produkt ist nicht verfügbar |