FQP3N80C Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, 3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
auf Bestellung 53553 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
401+ | 1.22 EUR |
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Technische Details FQP3N80C Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V.
Weitere Produktangebote FQP3N80C nach Preis ab 1.16 EUR bis 2.97 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FQP3N80C | Hersteller : onsemi / Fairchild | MOSFET 800V N-Ch Q-FET advance C-Series |
auf Bestellung 696 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP3N80C | Hersteller : ONSEMI |
Description: ONSEMI - FQP3N80C - Leistungs-MOSFET, n-Kanal, 800 V, 3 A, 4 ohm, TO-220, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800 Dauer-Drainstrom Id: 3 Qualifikation: - MSL: - Verlustleistung Pd: 107 Gate-Source-Schwellenspannung, max.: 5 Verlustleistung: 107 Bauform - Transistor: TO-220 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 4 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 4 SVHC: Lead (17-Jan-2022) |
auf Bestellung 747 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP3N80C | Hersteller : ON Semiconductor | Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FQP3N80C | Hersteller : ON Semiconductor | Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FQP3N80C | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 12A; 107W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Pulsed drain current: 12A Power dissipation: 107W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: THT Gate charge: 16.5nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQP3N80C | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 12A; 107W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Pulsed drain current: 12A Power dissipation: 107W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: THT Gate charge: 16.5nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |