FPF2G120BF07AS onsemi
Hersteller: onsemiDescription: IGBT MODULE 650V 40A 156W F2
Packaging: Tray
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: F2
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 156 W
Current - Collector Cutoff (Max): 250 µA
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 172.96 EUR |
| 10+ | 157.9 EUR |
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Technische Details FPF2G120BF07AS onsemi
Description: INSULATED GATE BIPOLAR TRANSISTO, Packaging: Bulk, Package / Case: Module, Mounting Type: Through Hole, Input: Standard, Configuration: 3 Independent, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A, NTC Thermistor: Yes, Supplier Device Package: F2, IGBT Type: Field Stop, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 156 W, Current - Collector Cutoff (Max): 250 µA.
Weitere Produktangebote FPF2G120BF07AS nach Preis ab 167.59 EUR bis 167.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
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FPF2G120BF07AS | Hersteller : ON Semiconductor / Fairchild |
IGBT Modules High Power Module |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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| FPF2G120BF07AS | Hersteller : Fairchild Semiconductor |
Description: INSULATED GATE BIPOLAR TRANSISTO Packaging: Bulk Package / Case: Module Mounting Type: Through Hole Input: Standard Configuration: 3 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A NTC Thermistor: Yes Supplier Device Package: F2 IGBT Type: Field Stop Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 156 W Current - Collector Cutoff (Max): 250 µA |
auf Bestellung 980 Stücke: Lieferzeit 10-14 Tag (e) |
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| FPF2G120BF07AS | Hersteller : ONSEMI |
Description: ONSEMI - FPF2G120BF07AS - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
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FPF2G120BF07AS | Hersteller : onsemi |
Description: IGBT MODULE 650V 40A 156W F2 Packaging: Tray Package / Case: Module Mounting Type: Through Hole Input: Standard Configuration: 3 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A NTC Thermistor: Yes Supplier Device Package: F2 IGBT Type: Field Stop Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 156 W Current - Collector Cutoff (Max): 250 µA |
Produkt ist nicht verfügbar |