FP75R17N3E4B11BPSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MOD 1700V 150A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 312.49 EUR |
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Technische Details FP75R17N3E4B11BPSA1 Infineon Technologies
Description: IGBT MOD 1700V 150A 20MW, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V.
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