Technische Details FJP5200OTU ON Semiconductor
Description: TRANS NPN 250V 17A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -50°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A, Current - Collector Cutoff (Max): 5µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V, Frequency - Transition: 30MHz, Supplier Device Package: TO-220-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 17 A, Voltage - Collector Emitter Breakdown (Max): 250 V, Power - Max: 80 W.
Weitere Produktangebote FJP5200OTU
Foto | Bezeichnung | Hersteller | Beschreibung |
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FJP5200OTU | Hersteller : onsemi |
Description: TRANS NPN 250V 17A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -50°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 17 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 80 W |
Produkt ist nicht verfügbar |
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FJP5200OTU | Hersteller : onsemi / Fairchild | Bipolar Transistors - BJT NPN Epitaxial Silicon |
Produkt ist nicht verfügbar |