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FGY4L160T120SWD

FGY4L160T120SWD onsemi


fgy4l160t120swd-d.pdf Hersteller: onsemi
Description: 1200V 160A FS7 IGBT TP247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 264.1 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 160A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 60.8ns/236.8ns
Switching Energy: 4.2mJ (on), 5.9mJ (off)
Test Condition: 600V, 160A, 4Ohm, 15V
Gate Charge: 474 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 640 A
Power - Max: 1500 W
auf Bestellung 3377 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+23.99 EUR
10+ 16.9 EUR
100+ 12.89 EUR
500+ 12.42 EUR
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Technische Details FGY4L160T120SWD onsemi

Description: 1200V 160A FS7 IGBT TP247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 264.1 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 160A, Supplier Device Package: TO-247-4L, IGBT Type: Field Stop, Td (on/off) @ 25°C: 60.8ns/236.8ns, Switching Energy: 4.2mJ (on), 5.9mJ (off), Test Condition: 600V, 160A, 4Ohm, 15V, Gate Charge: 474 nC, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 640 A, Power - Max: 1500 W.

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FGY4L160T120SWD Hersteller : ON Semiconductor fgy4l160t120swd-d.pdf 1200V 160A FS7 IGBT TP247-4L
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FGY4L160T120SWD FGY4L160T120SWD Hersteller : onsemi FGY4L160T120SWD_D-3473672.pdf IGBTs 1200V 160A FS7 IGBT TP247-4L
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