auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 10.63 EUR |
| 10+ | 8.92 EUR |
| 25+ | 8.66 EUR |
| 100+ | 7.99 EUR |
| 250+ | 6.81 EUR |
| 450+ | 6.23 EUR |
| 900+ | 5.17 EUR |
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Technische Details FGHL75T65MQD onsemi
Description: IGBT 650V 75A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 36 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 33ns/176ns, Switching Energy: 1.94mJ (on), 1.55mJ (off), Test Condition: 400V, 75A, 10Ohm, 15V, Gate Charge: 145 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 375 W.
Weitere Produktangebote FGHL75T65MQD nach Preis ab 6.47 EUR bis 10.72 EUR
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FGHL75T65MQD | Hersteller : onsemi |
 Description: IGBT 650V 75A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 36 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/176ns Switching Energy: 1.94mJ (on), 1.55mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 145 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W |
auf Bestellung 504 Stücke: Lieferzeit 10-14 Tag (e) |
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| FGHL75T65MQD | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 80A 375000mW Tube |
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