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FGHL40T65LQDT onsemi
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IGBT Transistors IGBT - 650 V 40 A FS4 low Vce(sat) IGBT with full rated copack diode
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 6.44 EUR |
10+ | 5.42 EUR |
25+ | 5.1 EUR |
100+ | 3.63 EUR |
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Technische Details FGHL40T65LQDT onsemi
Description: IGBT TRENCH FS 650V 60A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 84 ns, Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 24ns/364ns, Switching Energy: 620µJ (on), 1.03mJ (off), Test Condition: 400V, 20A, 4.7Ohm, 15V, Gate Charge: 414 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 273 W.
Weitere Produktangebote FGHL40T65LQDT nach Preis ab 3.34 EUR bis 6.44 EUR
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FGHL40T65LQDT | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 84 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/364ns Switching Energy: 620µJ (on), 1.03mJ (off) Test Condition: 400V, 20A, 4.7Ohm, 15V Gate Charge: 414 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 273 W |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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