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FGH60N60SFTU Fairchild Semiconductor
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Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
auf Bestellung 9888 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
81+ | 6.09 EUR |
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Technische Details FGH60N60SFTU Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A, Supplier Device Package: TO-247, IGBT Type: Field Stop, Td (on/off) @ 25°C: 22ns/134ns, Switching Energy: 1.79mJ (on), 670µJ (off), Test Condition: 400V, 60A, 5Ohm, 15V, Gate Charge: 198 nC, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 180 A, Power - Max: 378 W.
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FGH60N60SFTU | Hersteller : ONSEMI |
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FGH60N60SFTU | Hersteller : ON Semiconductor |
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