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FGH30N120FTDTU ON Semiconductor

Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 60A 339000mW 3-Pin(3+Tab) TO-247AB Rail

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Technische Details FGH30N120FTDTU ON Semiconductor

Description: IGBT 1200V 60A 339W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 730 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Gate Charge: 208 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 339 W.

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Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis ohne MwSt
	FGH30N120FTDTU	Hersteller : onsemi	Description: IGBT 1200V 60A 339W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 730 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Gate Charge: 208 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 90 A Power - Max: 339 W	Produkt ist nicht verfügbar