FGH20N6S2D Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 7.7ns/87ns
Switching Energy: 25µJ (on), 58µJ (off)
Test Condition: 390V, 7A, 25Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
auf Bestellung 9624 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 365+ | 1.35 EUR |
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Technische Details FGH20N6S2D Fairchild Semiconductor
Description: N-CHANNEL IGBT, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 31 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A, Supplier Device Package: TO-247, Td (on/off) @ 25°C: 7.7ns/87ns, Switching Energy: 25µJ (on), 58µJ (off), Test Condition: 390V, 7A, 25Ohm, 15V, Gate Charge: 30 nC, Current - Collector (Ic) (Max): 28 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 125 W.
Weitere Produktangebote FGH20N6S2D
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| FGH20N6S2D | Hersteller : ONSEMI |
Description: ONSEMI - FGH20N6S2D - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 9624 Stücke: Lieferzeit 14-21 Tag (e) |