FGB20N60SF ON Semiconductor
auf Bestellung 3200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 1.23 EUR |
| 2400+ | 1.18 EUR |
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Technische Details FGB20N60SF ON Semiconductor
Description: IGBT FIELD STOP 600V 40A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Field Stop, Td (on/off) @ 25°C: 13ns/90ns, Switching Energy: 370µJ (on), 160µJ (off), Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 65 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 208 W.
Weitere Produktangebote FGB20N60SF nach Preis ab 1.42 EUR bis 4.05 EUR
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FGB20N60SF | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 600V 40A 208W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 194 Stücke: Lieferzeit 14-21 Tag (e) |
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FGB20N60SF | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 600V 40A 208W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 194 Stücke: Lieferzeit 14-21 Tag (e) |
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FGB20N60SF | Hersteller : Fairchild Semiconductor |
Description: INSULATED GATE BIPOLAR TRANSISTO Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Field Stop Td (on/off) @ 25°C: 13ns/90ns Switching Energy: 370µJ (on), 160µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 65 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 208 W |
auf Bestellung 726 Stücke: Lieferzeit 10-14 Tag (e) |
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FGB20N60SF | Hersteller : onsemi / Fairchild |
IGBT Transistors 600V, 20A Field Stop IGBT |
auf Bestellung 270 Stücke: Lieferzeit 10-14 Tag (e) |
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FGB20N60SF Produktcode: 92813 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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FGB20N60SF | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 600V 40A 208000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FGB20N60SF | Hersteller : onsemi |
Description: IGBT FIELD STOP 600V 40A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Field Stop Td (on/off) @ 25°C: 13ns/90ns Switching Energy: 370µJ (on), 160µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 65 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 208 W |
Produkt ist nicht verfügbar |
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FGB20N60SF | Hersteller : onsemi |
Description: IGBT FIELD STOP 600V 40A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Field Stop Td (on/off) @ 25°C: 13ns/90ns Switching Energy: 370µJ (on), 160µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 65 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 208 W |
Produkt ist nicht verfügbar |