FGA70N30TDTU Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: IGBT, 40A, 300V, N-CHANNEL
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 21 ns
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 20A
Supplier Device Package: TO-3PN
IGBT Type: Trench
Gate Charge: 125 nC
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 201 W
auf Bestellung 660 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 171+ | 2.86 EUR |
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Technische Details FGA70N30TDTU Fairchild Semiconductor
Description: IGBT, 40A, 300V, N-CHANNEL, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 21 ns, Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 20A, Supplier Device Package: TO-3PN, IGBT Type: Trench, Gate Charge: 125 nC, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 201 W.
Weitere Produktangebote FGA70N30TDTU
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| FGA70N30TDTU | Hersteller : ONSEMI |
Description: ONSEMI - FGA70N30TDTU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 660 Stücke: Lieferzeit 14-21 Tag (e) |