FGA6530WDF ON Semiconductor / Fairchild
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Technische Details FGA6530WDF ON Semiconductor / Fairchild
Description: IGBT 650V 60A 176W TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 81 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A, Supplier Device Package: TO-3PN, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 12ns/42.4ns, Switching Energy: 960µJ (on), 162µJ (off), Test Condition: 400V, 30A, 6Ohm, 15V, Gate Charge: 37.4 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 176 W.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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FGA6530WDF | Hersteller : onsemi |
Description: IGBT 650V 60A 176W TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 81 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/42.4ns Switching Energy: 960µJ (on), 162µJ (off) Test Condition: 400V, 30A, 6Ohm, 15V Gate Charge: 37.4 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 176 W |
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