![FFSB1265A FFSB1265A](https://www.mouser.com/images/onsemiconductor/lrg/D2PAK2-418BK_t.jpg)
auf Bestellung 714 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 7.99 EUR |
10+ | 6.72 EUR |
100+ | 5.44 EUR |
250+ | 5.26 EUR |
500+ | 4.59 EUR |
800+ | 4.1 EUR |
2400+ | 3.89 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FFSB1265A onsemi
Description: DIODE SIL CARB 650V 14A D2PAK-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 665pF @ 1V, 100kHz, Current - Average Rectified (Io): 14A, Supplier Device Package: TO-263 (D2Pak), Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A, Current - Reverse Leakage @ Vr: 200 µA @ 650 V.
Weitere Produktangebote FFSB1265A nach Preis ab 5.47 EUR bis 8.06 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FFSB1265A | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 665pF @ 1V, 100kHz Current - Average Rectified (Io): 14A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
auf Bestellung 700 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSB1265A | Hersteller : ON Semiconductor |
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auf Bestellung 720 Stücke: Lieferzeit 21-28 Tag (e) |
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FFSB1265A | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 665pF @ 1V, 100kHz Current - Average Rectified (Io): 14A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
Produkt ist nicht verfügbar |