FFSB0865B onsemi
Hersteller: onsemi
Description: DIODE SIL CARB 650V 10.1A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 336pF @ 1V, 100kHz
Current - Average Rectified (Io): 10.1A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 10.1A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 336pF @ 1V, 100kHz
Current - Average Rectified (Io): 10.1A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 765 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.54 EUR |
10+ | 3.81 EUR |
100+ | 3.09 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FFSB0865B onsemi
Description: DIODE SIL CARB 650V 10.1A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 336pF @ 1V, 100kHz, Current - Average Rectified (Io): 10.1A, Supplier Device Package: TO-263 (D2Pak), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote FFSB0865B nach Preis ab 2.22 EUR bis 4.58 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FFSB0865B | Hersteller : onsemi | Schottky Diodes & Rectifiers 650V 8A SIC SBD GEN1.5 |
auf Bestellung 471 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSB0865B | Hersteller : ON Semiconductor | Rectifier Diode Schottky SiC 650V 10.1A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FFSB0865B | Hersteller : ON Semiconductor | Rectifier Diode Schottky SiC 650V 10.1A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FFSB0865B | Hersteller : onsemi |
Description: DIODE SIL CARB 650V 10.1A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 336pF @ 1V, 100kHz Current - Average Rectified (Io): 10.1A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
Produkt ist nicht verfügbar |