FF6MR12KM1PHOSA1 Infineon Technologies
auf Bestellung 24 Stücke:
Lieferzeit 375-379 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 816.02 EUR |
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Technische Details FF6MR12KM1PHOSA1 Infineon Technologies
Description: SIC 2N-CH 1200V 250A AG-62MM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 250A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V, Rds On (Max) @ Id, Vgs: 5.81mOhm @ 250A, 15V, Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V, Vgs(th) (Max) @ Id: 5.15V @ 80mA, Supplier Device Package: AG-62MM.
Weitere Produktangebote FF6MR12KM1PHOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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FF6MR12KM1PHOSA1 | Hersteller : ROCHESTER ELECTRONICS |
 Description: ROCHESTER ELECTRONICS - FF6MR12KM1PHOSA1 - FFXMR12KM1PH MOSFET N-CHANNEL SINGLE 25tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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| FF6MR12KM1PHOSA1 | Hersteller : Infineon Technologies |
samples only |
Produkt ist nicht verfügbar |
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FF6MR12KM1PHOSA1 | Hersteller : Infineon Technologies |
Description: SIC 2N-CH 1200V 250A AG-62MM Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V Rds On (Max) @ Id, Vgs: 5.81mOhm @ 250A, 15V Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V Vgs(th) (Max) @ Id: 5.15V @ 80mA Supplier Device Package: AG-62MM |
Produkt ist nicht verfügbar |