FF1800R12IE5PBPSA1 Infineon Technologies
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Technische Details FF1800R12IE5PBPSA1 Infineon Technologies
Description: IGBT MOD 1200V 1800A 20MW, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 1800 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V.
Weitere Produktangebote FF1800R12IE5PBPSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
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FF1800R12IE5PBPSA1 | Hersteller : Infineon Technologies | Trench Field Stop IGBT Module Transistor |
Produkt ist nicht verfügbar |
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FF1800R12IE5PBPSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 1800A 20MW Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 1800 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V |
Produkt ist nicht verfügbar |
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FF1800R12IE5PBPSA1 | Hersteller : Infineon Technologies | IGBT Modules N |
Produkt ist nicht verfügbar |