FF11MR12W1M1PB11BPSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET 2N-CH 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 247.3 EUR |
| 10+ | 241.24 EUR |
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Technische Details FF11MR12W1M1PB11BPSA1 Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1B, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 100A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V, Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V, Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V, Vgs(th) (Max) @ Id: 5.55V @ 40mA, Supplier Device Package: AG-EASY1B-2, Part Status: Obsolete.
Weitere Produktangebote FF11MR12W1M1PB11BPSA1 nach Preis ab 346.05 EUR bis 346.05 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FF11MR12W1M1PB11BPSA1 | Hersteller : Infineon Technologies |
Discrete Semiconductor Modules LOW POWER EASY |
auf Bestellung 335 Stücke: Lieferzeit 10-14 Tag (e) |
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| FF11MR12W1M1PB11BPSA1 | Hersteller : Infineon Technologies |
8 POS AMPSEAL VERTICAL HDR |
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