FDZ1323NZ onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 20V 10A 6WLCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-WLCSP (1.3x2.3)
Part Status: Active
auf Bestellung 9737 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 2.31 EUR |
| 10+ | 1.88 EUR |
| 100+ | 1.46 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.01 EUR |
| 2000+ | 0.95 EUR |
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Technische Details FDZ1323NZ onsemi
Description: MOSFET 2N-CH 20V 10A 6WLCSP, Packaging: Tape & Reel (TR), Package / Case: 6-XFBGA, WLCSP, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 10A, Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V, Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 6-WLCSP (1.3x2.3), Part Status: Active.
Weitere Produktangebote FDZ1323NZ nach Preis ab 0.91 EUR bis 2.34 EUR
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FDZ1323NZ | Hersteller : onsemi / Fairchild |
MOSFET COMMONDRAIN N-CH. 2.5 V P |
auf Bestellung 4839 Stücke: Lieferzeit 10-14 Tag (e) |
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FDZ1323NZ | Hersteller : ONSEMI |
Description: ONSEMI - FDZ1323NZ - Dual-MOSFET, WLCSP tariffCode: 85412900 Dauer-Drainstrom Id, p-Kanal: - hazardous: false Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 10 Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 20 euEccn: NLR Bauform - Transistor: WLCSP Anzahl der Pins: 6 Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.013 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2 Betriebstemperatur, max.: 150 SVHC: No SVHC (10-Jun-2022) |
Produkt ist nicht verfügbar |
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FDZ1323NZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 10A 6-Pin WLCSP T/R |
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FDZ1323NZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 10A 6-Pin WLCSP T/R |
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FDZ1323NZ | Hersteller : onsemi |
Description: MOSFET 2N-CH 20V 10A 6WLCSP Packaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-WLCSP (1.3x2.3) Part Status: Active |
Produkt ist nicht verfügbar |