FDY3000NZ onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 600MA SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 446mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-563F
Description: MOSFET 2N-CH 20V 600MA SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 446mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-563F
auf Bestellung 1499 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
32+ | 0.55 EUR |
100+ | 0.38 EUR |
500+ | 0.3 EUR |
1000+ | 0.24 EUR |
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Technische Details FDY3000NZ onsemi
Description: ONSEMI - FDY3000NZ - Dual-MOSFET, n-Kanal, 20 V, 600 mA, 0.7 ohm, tariffCode: 85412100, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -A, hazardous: false, rohsPhthalatesCompliant: YES, Drain-Source-Spannung Vds, p-Kanal: -V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 600mA, Drain-Source-Durchgangswiderstand, p-Kanal: -ohm, Verlustleistung, p-Kanal: -W, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Anzahl der Pins: 6Pins, Drain-Source-Durchgangswiderstand, n-Kanal: 0.7ohm, productTraceability: No, Verlustleistung, n-Kanal: 625mW, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote FDY3000NZ
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FDY3000NZ | Hersteller : onsemi / Fairchild | MOSFET 20V Dual N-Chl 2.5V Spec PwrTrch MOSFET |
auf Bestellung 105000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDY3000NZ | Hersteller : ONSEMI |
Description: ONSEMI - FDY3000NZ - Dual-MOSFET, n-Kanal, 20 V, 600 mA, 0.7 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: -A hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: -V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 600mA Drain-Source-Durchgangswiderstand, p-Kanal: -ohm Verlustleistung, p-Kanal: -W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Anzahl der Pins: 6Pins Drain-Source-Durchgangswiderstand, n-Kanal: 0.7ohm productTraceability: No Verlustleistung, n-Kanal: 625mW Betriebstemperatur, max.: 150°C |
auf Bestellung 14480 Stücke: Lieferzeit 14-21 Tag (e) |
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FDY3000NZ | Hersteller : ON Semiconductor | Trans MOSFET N-CH 20V 0.6A 6-Pin SOT-563F T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDY3000NZ | Hersteller : onsemi |
Description: MOSFET 2N-CH 20V 600MA SOT563F Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 446mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-563F |
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