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FDS4501h Fairchild Semiconductor
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Description: MOSFET N/P-CH 30V 9.3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.3A, 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 1958pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 40090 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
415+ | 1.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDS4501h Fairchild Semiconductor
Description: MOSFET N/P-CH 30V 9.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, 20V, Current - Continuous Drain (Id) @ 25°C: 9.3A, 5.6A, Input Capacitance (Ciss) (Max) @ Vds: 1958pF @ 10V, Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.
Weitere Produktangebote FDS4501h nach Preis ab 0.83 EUR bis 1.97 EUR
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FDS4501h | Hersteller : onsemi / Fairchild |
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auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS4501h | Hersteller : FAI |
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auf Bestellung 1847 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4501h | Hersteller : FAIR |
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auf Bestellung 46 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4501h | Hersteller : FAIRCHILD |
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auf Bestellung 30018 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4501h | Hersteller : FAIRCHILD |
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auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4501h | Hersteller : FSC |
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auf Bestellung 37 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4501h | Hersteller : fsc |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4501h | Hersteller : FSC |
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auf Bestellung 1037 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4501h | Hersteller : ONSEMI |
![]() ![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 9.3/-5.6A; 2.5W; SO8 Type of transistor: N/P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30/-20V Drain current: 9.3/-5.6A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20/±8V On-state resistance: 80/29mΩ Mounting: SMD Gate charge: 21/27nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDS4501H | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDS4501h | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 9.3A, 5.6A Input Capacitance (Ciss) (Max) @ Vds: 1958pF @ 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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FDS4501h | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 9.3A, 5.6A Input Capacitance (Ciss) (Max) @ Vds: 1958pF @ 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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FDS4501h | Hersteller : ONSEMI |
![]() ![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 9.3/-5.6A; 2.5W; SO8 Type of transistor: N/P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30/-20V Drain current: 9.3/-5.6A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20/±8V On-state resistance: 80/29mΩ Mounting: SMD Gate charge: 21/27nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |