auf Bestellung 9990 Stücke:
Lieferzeit 535-539 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 2.96 EUR |
| 10+ | 2.68 EUR |
| 100+ | 2.15 EUR |
| 500+ | 1.78 EUR |
| 1000+ | 1.46 EUR |
| 2500+ | 1.42 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDS2672 onsemi / Fairchild
Description: MOSFET N-CH 200V 3.9A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 3.9A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 100 V.
Weitere Produktangebote FDS2672 nach Preis ab 1.46 EUR bis 3.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDS2672 | Hersteller : onsemi |
 Description: MOSFET N-CH 200V 3.9A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.9A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 100 V |
auf Bestellung 1620 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
FDS2672 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 3.9A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
|||||||||||||
 |
FDS2672 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 3.9A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FDS2672 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 3.9A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
|||||||||||||
 |
FDS2672 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.9A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.9A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 148mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FDS2672 | Hersteller : onsemi |
Description: MOSFET N-CH 200V 3.9A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.9A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 100 V |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FDS2672 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.9A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.9A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 148mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |