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FDR8508P Fairchild Semiconductor
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Description: MOSFET 2P-CH 30V 3A SUPERSOT 8
Packaging: Bulk
Package / Case: 8-TSOP (0.130", 3.30mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-8
Part Status: Obsolete
auf Bestellung 21815 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
201+ | 2.43 EUR |
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Technische Details FDR8508P Fairchild Semiconductor
Description: MOSFET 2P-CH 30V 3A SUPERSOT 8, Packaging: Bulk, Package / Case: 8-TSOP (0.130", 3.30mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3A, Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V, Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SuperSOT™-8, Part Status: Obsolete.
Weitere Produktangebote FDR8508P
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FDR8508P | Hersteller : FAIRCHILD |
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auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDR8508P | Hersteller : FAIRCHILD |
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auf Bestellung 31000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDR8508P | Hersteller : FAIRCHILD |
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auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDR8508P | Hersteller : FSC |
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auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |