![FDPF20N50 FDPF20N50](https://static6.arrow.com/aropdfconversion/arrowimages/fee66d5bbefbe47bcf90d79e914b9a646481854f/cs-5203a.jpg)
FDPF20N50 ON Semiconductor
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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41+ | 3.82 EUR |
49+ | 3.08 EUR |
100+ | 2.4 EUR |
500+ | 1.84 EUR |
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Technische Details FDPF20N50 ON Semiconductor
Description: MOSFET N-CH 500V 20A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V, Power Dissipation (Max): 38.5W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote FDPF20N50 nach Preis ab 2.31 EUR bis 4.77 EUR
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FDPF20N50 | Hersteller : onsemi / Fairchild |
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auf Bestellung 1973 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPF20N50 | Hersteller : ON Semiconductor |
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auf Bestellung 9990 Stücke: Lieferzeit 21-28 Tag (e) |
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FDPF20N50 Produktcode: 191938 |
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Produkt ist nicht verfügbar
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FDPF20N50 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDPF20N50 | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V Power Dissipation (Max): 38.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |